ECL-compatible low-power-consumption 10-Gb/s GaAs 8 : 1 multiplexer and 1 : 8 demultiplexer

IEICE Transactions on Electronics

Volumn E82-C, Issue 11, 1999, Pages 1992-1998

  Yoshida, Nobuhide ^a   Fujii, Masahiro ^a   Atsumo, Takao ^a   Numata, Keiichi ^a   Kohnq, Michihisa ^a   Oikawa, Hirokazu ^a   Tsutsui, Hiroaki ^a   Maeda, Tadashi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

10Gb s; demultiplexer; ECLcompatible; GaAs; low power consumption; multiplexer

Indexed keywords

EID: 0000370389     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. H. Hida, M. Tokushima, T. Maeda, M. Ishikawa, M. Pukaishi, K. Numata, and Y. Ohno, "O.CV supply %-oltage 0.25urn E/D-HJFET (IS3T) technology for low power consumption and high speed LSIs," IEEE GaAs IC Symposium Technical Digest, pp.197-200, 1993.
2. T. Ohshima, N. Yamamoto, T. Ichioka, T. Kimura, and Y. Sano, "Application of phase-shifting mask technology to 0.17/im-gate GaAs MESFET for ultra high speed IC's," IEEE Device Research Conference Technical Digest, VIB-1, 1994.
3. L. Andersson, B. Rudberg, T. Lewin, M. Reed, S. Planar, and S. Sundaram, "Silicon bipolar chipsct for SONET/SDH 10Gbit/s fiber-optic communication links," IEEE J. Solid' State Circuits, vol.30, no.3, pp.210-218, March 1995.
4. C. Stout and J. Doernberg, "10-Gb/s silicon bipolar 8 : 1 multiplexer and 1 : 8 demultiplexer," IEEE J. Solid-State Circuits, vol.28, no.3, pp.339-343, March 1993.
5. K. Ishida, H. Wakimoto, K. Yoshihara, M. Komo, S. Shimizu, Y. Kitura, K. Tomida, T. Suzuki, and U. Uchitomi, "A 10-GIIz 8-b multiplexer/demultiplexer chip set for the SONET STS-192 system," IEEE J. Solid-State Circuits, vol.26, no.12, pp.1936-1943, Dec. 1991.
6. T. Maeda, "Analysis of the operating-speed and power con- -41 sumption of GaAs DCFL D-type nip-flops," Solid-State Electronics, vol.41, no.6, pp.807-811, June 1997.
7. T. Maeda and M. Fujii, "Analytical expression for operating speed of GaAs SCFL D-type flip-flops," Solid-State Electronics, vol.41, no.ll, pp.1687-1691, Nov. 1997.
8. T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fnkaishi, H. Hida, and Y. Ohno, "A high-speed lowpower tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSIs," IEEE J. Solid-State Cir- cuits, vol.31, no.2, pp.240-246, Feb. 1996.
9. T. Seshita, Y. Ikcda, H. Wakimoto, K. Ishida, T. Terada, T. Matsunaga, T. Suzuki, Y. Kitamura, and N. Uchitomi, "A 20 GHz 8 bit multiplexer IC implemented with 0.5 μm WNx/W-gate GaAs MESFETs," IEEE J. Solid-State Circuits, vol.29, no.12, pp.1583-1588, Dec. 1994.
10. M. Ohhata, Y. Yamane, T. Enoki, S. Sugitani, N. Kato, and M. Hirayama, "HGb/s multiplexer and demultiplexer using 0.15/im GaAs MESFETs," Electron Lett., vol.29, no.7, pp.467-468, March 1990.
11. M. Ohhata, Y. Yamane, T. Enoki, S. Sugitani, N. Kato, and M. Hirayama, "A 10-Gb/s GaAs 4-bit multiplexer and demultiplexer," Proc. 3rd Asia-Pacific Microwave Conf., pp.1131-1134, 1990.
12. K. Tanaka, M. Shikata, T. Kimura, Y. Sano, and M. Akiyama, "High speed 8 : 1 multiplexer and 1 : 8 demultiplexcr ICs using GaAs DCFL circuit," IEEE GaAs IC Symposium Technical Digest, pp.229-232, 1991.
13. M. Fujii, K. Numata, T. Maeda, M. Tokushima, S. Wada, M. Fukaishi, and M. Ishikawa, "A 150-mW 8 : 1 MUX and 170-mW 1 : 8 DEMUX for 2.4-Gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFETs," IEEE Trans. Very Large Scale Integration Systems, vol.6, no.3, pp.43-46, March 1998.
14. H. Oikawa, M. Kohno, A. Mochizuki, and Y. Nashimoto, "Low damage and selective etching of GaAs using BCls/SFe gas in ECR plasma," Electrochem. Soc. Proc., vol.96-2, 24th SOTAPOCS, pp.246-252, 1996.
15. M. Kohno, H. Oikawa, S. Asai, H. Tsutsui, T. Matsumura, and Y. Nashimoto, "Water-rinse posttreatment for GaAs/AlGaAs selective dry etching," Electrochem. Soc. Proc., vol.96-15, 25th SOTAPOCS, pp.4955, 1996.
16. K. Numata, M. Fujii, T. Maeda, M. Tokushima, S. Wada, M. Fukaishi, and M. Ishikawa, "Ultra-Iow-powerconsumption heterojunction FET 8 : 1 MUX/1 : 8 DEMUX for 2.4-Gbps optical-fiber communication systems," IEEE GaAs IC Symposium Technical Digest, pp.39-43, 1995.