1/f resistance noise in the large magnetoresistance manganites

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3644-3646

  Alers, G B ^a   Ramirez, A P ^a   Jin, S ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000367746     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115757     Document Type: Article

References (11)

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2. P. Schiffer, A. P. Ramirez, W. Bao, and S. W. Cheong, Phys. Rev. Lett. 75, 3336 (1995).
3. S. Jin, M. McCormack, and L. H. Chen (unpublished).
4. A. J. Millis, P. B. Littlewood, and B. I. Shraiman, Phys. Rev. Lett. 74, 5144 (1995).
5. M. B. Weissman, Rev. Mod. Phys. 60, 537 (1988).
6. H. T. Hardner, M. B. Weissman, M. B. Salamon, and S. S. P. Parkin, Phys. Rev. B 48, 16156 (1993).
7. N. E. Israeloff, M. B. Weissman, G. J. Nieuwenhuys, and J. Kosiorowska, Phys. Rev. Lett. 63, 794 (1989); N. E. Israeloff, M. B. Weissman, G. A. Garunkel, D. J. VanHarlingen, J. H. Schofield, and A. J. Lucero, Phys. Rev. Lett. 60, 152 (1988).
8. The normalizations in Eq. (2) were chosen to separate out terms that are independent of the large relative changes in resistance and magnetization that occur in these materials. Variations of the expression in brackets for the temperature region below the transition were found to be within about a factor of 3 which is small relative to the factor of >100 change in R and M for the same temperature range. These films exhibited a significant hysteresis in M(H) which required a differentiation between small field saturation and large field saturation for the magnetization.
9. S. Chikazumi and S. H. Charap, Physics of Magnetism (Wiley, New York, 1964).
10. A. P. Ramirez, P. Schiffer, S.-W. Cheong, C. H. Chen, W. Bao, T. T. M. Palstra, B. Zegarski, P. L. Gammel, and D. J. Bishop, Phys. Rev. Lett. 76, 3188 (1996).
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 589.