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Volumn 52, Issue 23, 1995, Pages 16696-16701

Surface morphology of Ge(001) during etching by low-energy ions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000361068     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.52.16696     Document Type: Article
Times cited : (51)

References (29)
  • 18
    • 84926596325 scopus 로고    scopus 로고
    • Joseph A. Stroscio, D. T. Pierce, M. Stiles, A. Zangwill, and L. M. Sander (unpublished).
  • 26
    • 0001301076 scopus 로고
    • Single atom vacancies are thought to decay rapidly into dimer vacancies, see Zhenyu Zheng and Horia Metiu
    • Single atom vacancies are thought to decay rapidly into dimer vacancies, see Zhenyu Zheng and Horia Metiu, Phys. Rev. B 48, 8166 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 8166
  • 28
    • 84926531287 scopus 로고    scopus 로고
    • While the data for d versus t approximate a power law, we do not observe a single, well defined power law for a large range of t and are therefore unable to apply a quantitative scaling analysis to our data.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.