Substitutional, interstitial, and neutral zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3221-3227

  Chu, S N G ^a   Logan, R A ^a   Geva, M ^b   Ha, N T ^a   Karlicek, R F ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000359016     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363263     Document Type: Article

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