Capacitance transient studies of electron irradiated 4H-SiC

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 336-339

  Hemmingsson, C ^a   Son, N T ^a   Kordina, O ^a   Janzen E ^a   Lindstrom J L ^b   Savage, S ^c   Nordell, N ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

Capture; Chemical vapor deposition; Cross section; Ionisation energy

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOSIMETRY; EPITAXIAL GROWTH; HETEROJUNCTIONS; IONIZATION OF SOLIDS; RADIATION EFFECTS;

ELECTRON IRRADIATION;

SILICON CARBIDE;

EID: 0000358497     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01999-X     Document Type: Article

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