Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

Journal of Materials Science

Volumn 26, Issue 12, 1991, Pages 3337-3342

  Rossi, M ^a,b   Vitali, G ^a,b   Karpuzov, D ^c   Kalitzova, M ^c   Budinov, H ^d  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b CNR   (Italy)

^c BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^d Institute of Micro and Optoelectronics ^*  (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000343497     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/BF01124682     Document Type: Article

References (12)

1. n+ self-aligned-gate AlGaAs/GaAs heterostructure FET
2. Microscopic processes in low-power laser annealing of ion-implanted Ge