Charge transport through superconductor/Anderson-insulator interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 14, 1997, Pages 9047-9057

  Frydman, Aviad ^a   Ovadyahu, Zvi ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000338473     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.9047     Document Type: Article

References (39)

1. P. W. Anderson, Phys. Rev. 109, 1492 (1958).
2. O. Faran and Z. Ovadyahu, Phys. Rev. B 38, 5457 (1988), and references therein.
3. F. P. Milliken and Z. Ovadyahu, Phys. Rev. Lett. 65, 911 (1990).
4. J. L. Pichard, M. Sanquer, K. Slevin and P. Debray, Phys. Rev. Lett.ibid. 65, 1812 (1990).
5. A. F. Andreev, Zh. Eksp. Teor. Fiz. 46, 1823 (1964) [Sov. Phys. JETP 19, 1228 (1964)].
6. G. E. Blonder, M. Tinkham and T. M. Klapwijk, Phys. Rev. B 25, 4515 (1982).
7. G. E. Blonder and M. Tinkham, Phys. Rev. B 27, 112 (1983).
8. A. Frydman and Z. Ovadyahu, Solid State Commun. 95, 79 (1995).
9. A. Frydman and Z. Ovadyahu, Europhys. Lett. 33, 217 (1996).
10. Z. Ovadyahu, J. Phys. C 19, 5187 (1986).
11. S. K. Bahl and S. M. Bhagat, J. Non-Cryst. Solids 17, 409 (1975).
12. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1979).
13. B. I. Shklovskii, Fiz. Tekh. Poluprovodn. 10, 1440 (1976) [Sov. Phys. Semicond. 10, 855 (1976)];
14. M. Pollak and I. Riess, J. Phys. C 9, 2339 (1976).
15. O. Faran and Z. Ovadyahu, Solid State Commun. 67, 823 (1988).
16. D. Shahar and Z. Ovadyahu, Phys. Rev. Lett. 64, 293 (1990).
17. M. L. Knotek, M. Pollak, T. M. Donovan and H. Kurtzman, Phys. Rev. Lett. 30, 853 (1972).
18. M. Ya Azbel, Solid State Commun. 45, 527 (1983).
19. V. Ambegaokar and A. Baratoff, Phys. Rev. Lett. 10, 486 (1963).
20. M. D. Fiske, Rev. Mod. Phys. 36, 221 (1964).
21. M. Dmitrenko and I. K. Yanson, Zh. Eksp. Teor. Fiz. 49, 1741 (1965) [Sov. Phys. JETP 22, 1190 (1966)].
22. P. W. Anderson and J. M. Rowell, Phys. Rev. Lett. 10, 230 (1993).
23. J. M. Rowell and W. L. Feldman, Phys. Rev. 172, 393 (1968).
24. A. A. Bright and J. R. Merrill, Phys. Rev.ibid. 184, 226 (1969).
25. A. W. Kleinsasser, R. E. Miller, W. H. Mallisonand and G. E. Arnold, Phys. Rev. Lett. 72, 1738 (1994), and references therein.
26. N. R. Werthamer, Phys. Rev. 147, 255 (1966).
27. J. R. Shrieffer and J. W. Wilkins, Phys. Rev. Lett. 10, 17 (1963).
28. T. M. Klapwijk, G. E. Blonder, and M. Tinkham, Physica 109&110B, 1657 (1982).
29. B. J. van Wees, P. de Vries, P. Magnee and T. M. Klapwijk, Phys. Rev. Lett. 69, 510 (1992).
30. C. W. J. Beenakker, Phys. Rev. B 48, 2812 (1992).
31. See also the observation regarding the difference between 'Anderson' and 'band-gap' types of insulators in results obtained using barriers made of a-Si versus a-Si:H (V. N. Gubankov, S. A. Kovtonyuk and V. P. Koshelets, Zh. Eksp. Teor. Fiz. 89, 1335 (1985) [Sov. Phys. JETP 62, 773 (1985)]).
32. I. M. Lishiftz and V. Y. Kirpichenkov, Zh. Eksp. Teor. Fiz. 77, 989 (1979) [Sov. Phys. JETP 50, 499 (1979)].
33. S. J. Bending and M. R. Beasley, Phys. Rev. Lett. 55, 234 (1985).
34. L. G. Aslamasov and M. V. Fistul', Zh. Eksp. Teor. Fiz. 83, 1170 (1982) [Sov. Phys. JETP 56, 666 (1982)].
35. M. Raikh and I. M. Ruzin, Zh. Eksp. Teor. Fiz. 92, 2257 (1987) [Sov. Phys. JETP 65, 1273 (1987)].
36. I. L. Aleiner, P. Clarke and L. I. Glazman, Phys. Rev. B 53, R7630 (1996).
37. L. I. Glazman and K. A. Matveev, Pisma Zh. Eksp. Teor. Fiz. 49, 570 (1989) [JETP Lett. 49, 659 (1989)].
38. A. Golub, Phys. Rev. B 52, 7458 (1995).
39. P. E. Gregers-Hansen, E. Hendricks, M. T. Levinson and G. R. Pickett, Phys. Rev. Lett. 31, 524 (1973).