Radiative transfer in semiconductor microcavities

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 925-928

  Wainstain, J ^a   Gendt, D ^a   Delalande, C ^a   Voos, M ^a   Thierry Mieg, V ^b   Bloch, J ^b   Planel, R ^b  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b Lab Microstructures Microlectron   (France)

Author keywords

Optical and electronic properties; Polaritons; Semiconductor quantum wells

Indexed keywords

EID: 0000333740     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00188-X     Document Type: Article

References (11)

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6. -2. Full width of the Lorentzien excitonic line: Γ = 1 meV. Energy difference between the two 1 s excitonic energies: 4 meV.
7. B. Deveaud, F. Clérot, N. Roy, S. Satzke, B. Sermage, D.S. Katzer, Phys. Rev. Lett. 67 (1991) 2355.
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11. We simply diagonalize in the H1, H2 and EC basis the three-level Hamiltonian with a non-diagonal term of 2.5 meV for the coupling between the cavity mode and the excitonic modes (this value provides the experimental Rabi splittings). The order of magnitude 15 meV is obtained by taking the range for which the H2 character of the mainly H2 state is larger than 1/2.