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Volumn 360, Issue 1-2, 1995, Pages 438-444

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20°C and +20°C

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000332314     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)01728-X     Document Type: Article
Times cited : (48)

References (7)
  • 7
    • 84914914481 scopus 로고
    • A simplistic model for reverse annealing in irradiated silicon
    • (1994) MPI-PhE/94-10
    • Lutz1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.