메뉴 건너뛰기




Volumn 93, Issue 6, 1990, Pages 4066-4072

Dissociative attachment in silane

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000296187     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.458738     Document Type: Article
Times cited : (46)

References (41)
  • 5
    • 85034888137 scopus 로고
    • Ph.D. Thesis, University of Nantes
    • (1980)
    • Turban, G.1
  • 18
    • 84950844653 scopus 로고
    • (personal communications, 1988);
    • (1987)
  • 19
    • 84950775516 scopus 로고    scopus 로고
    • to appear in Int. J. Mass Spectrom. Ion Phys.
  • 22
    • 84950832365 scopus 로고
    • Ph.D. Thesis, Harvard University
    • (1988)
    • Haaland, P.1
  • 23
    • 85034892460 scopus 로고    scopus 로고
    • Kimball Physics model ELG‐2 electron gun, KPI, Wilton, New Hampshire.
  • 26
    • 84950768983 scopus 로고
    • Report No. 85‐5, Department of Mathematical Sciences, Rice University, May
    • (1985)
    • Woods, D.J.1
  • 27
    • 84950885654 scopus 로고    scopus 로고
    • The Langevin rate is [Formula Omitted] using the measured polarizability [Formula Omitted]
  • 41
    • 84950818937 scopus 로고    scopus 로고
    • The diffusion constant was computed with the Chapman‐Enskog approximation assuming a gas temperature of 300° and a cross section of [Formula Omitted] The reduced mass contribution to the diffusion coefficient,[Formula Omitted] is between 0.254 for two silicons and 0.177 in the limit of large clusters in pure silane.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.