Energy bandgap of AlxGa1 - xAs1 - ySby and conduction band discontinuity of AlxGa1 - xAs1 - ySby/InAs and AlxGa1 - xAs1 - ySby/InGaAs heterostructures

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 2101-2104

  Anwar, A F M ^a   Webster, R T ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

CONDUCTION BAND DISCONTINUITY;

HETEROJUNCTIONS;

EID: 0000294597     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00157-9     Document Type: Article

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