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Volumn 11, Issue 10, 1999, Pages 814-820

Selective growth of poly(p-phenylene vinylene) prepared by chemical vapor deposition

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EID: 0000267589     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199907)11:10<814::AID-ADMA814>3.0.CO;2-Z     Document Type: Article
Times cited : (48)

References (24)
  • 18
    • 85034561986 scopus 로고    scopus 로고
    • note
    • 3 layer sandwiched between the ITO and aluminum electrodes comprising more than 50 % of the device area would be a significant source of leakage currents. Presumably, the efficiency of the device would be improved, were each pixel in the selectively grown polymer film to be addressed separately.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.