A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1591-1597

  McPherson, J W ^a   Khamankar, R B ^a   Shanware, A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000260082     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00172-4     Document Type: Article

References (6)

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3. A. Berman, International Reliability Physics Proceedings (IEEE,Piscataway, NJ, 1981), p.204.
4. J.W.McPherson and D.A. Baglee, International Reliability Physics Proceedings (IEEE,Piscataway, NJ, 1985), p.1.
5. I.C. Chen, S. Holland and C. Hu, International Reliability Physics Proceedings (IEEE,Piscataway, NJ, 1985), p. 24.
6. I. Chen, J. Choi, t. Chan, T. Ong and C. Hu, International Reliability Physics Proceedings (IEEE,Piscataway, NJ, 1988), p. 1.