Luminescence centres containing two, three and four hydrogen atoms in radiation-damaged silicon

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 251-254

  Safonov, A N ^a   Lightowlers, E C ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Defects; Hydrogen; Photoluminescence; Radiation damage; Silicon

Indexed keywords

EID: 0000247003     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01259-1     Document Type: Article

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