A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching

Plasma Chemistry and Plasma Processing

Volumn 6, Issue 3, 1986, Pages 205-230

  Plumb, I C ^a   Ryan, K R ^a  

^a CSIRO INDUSTRIAL PHYSICS   (Australia)

Author keywords

gas phase reactions; modelling; Plasma etching

Indexed keywords

EID: 0000246867     PISSN: 02724324     EISSN: 15728986     Source Type: Journal    
DOI: 10.1007/BF00575129     Document Type: Article

References (32)

1. Kinetics of the reactions of CCl3 with O and O2 and of CCl3O2 with NO at 295 K
2. Electron attachment to the perfluoroalkanes n-CNF2N+2 (N=1–6) using high pressure swarm techniques
3. Dissociation of Carbon Dioxide in the Positive Column of a Glow Discharge
4. Evaluated Kinetic and Photochemical Data for Atmospheric Chemistry: Supplement I CODATA Task Group on Chemical Kinetics
5. Molecular models for recombination and disproportionation of radicals