Computer simulation and experimental characterization of single electron transistors based on Schottky wrap gate control of 2DEG

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1584-1590

  Satoh, Yoshihiro ^a   Kasai, Seiya ^a   Jinushi, Kei Ichiroh ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; GaAs; Potential simulation; Schottky wrap gate (WPG); Single electron transistor (SET); Two dimensional electron gas (2DEG)

Indexed keywords

EID: 0000235648     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1584     Document Type: Article

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