Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutions

Chemical Physics Letters

Volumn 186, Issue 2-3, 1991, Pages 275-280

  Hessel, H E ^a   Feltz, A ^a   Reiter, M ^a   Memmert, U ^a   Behm, R J ^a  

^a UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000220481     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0009-2614(91)85140-R     Document Type: Article

References (15)

1. The surface state of Si (100) and (111) wafers after treatment with hydrofluoric acid
2. The influence of anions on the structure of underpotentially deposited Cu on Au(111): A LEED, RHEED and AES study
3. LEED studies of vicinal surfaces of germanium
4. Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)
5. Observation of Etching of n-Type Silicon in Aqueous HF Solutions