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Volumn 47, Issue 24, 1993, Pages 16237-16241

Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000213980     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.47.16237     Document Type: Article
Times cited : (13)

References (26)
  • 6
    • 84926940396 scopus 로고    scopus 로고
    • B. Clerjaud, D. Cote, F. Gendron, W.-S. Hahn, M. Krause, C. Porte, and W. Ulrici, in Defects in Semiconductors 16, edited by G. Davies, G. G. DeLeo, and M. Stavola (TransTech, Zurich, 1992), p. 563.
  • 20
    • 84926907765 scopus 로고    scopus 로고
    • M. Stavola, D. M. Kozuch, C. R. Abernathy, and W. S. Hobson, Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by S. J. Pearton, D. K. Sadana, and J. M. Zavada (MRS, Pittsburgh, 1992), p. 75.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.