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Volumn 47, Issue 12, 2000, Pages 2379-2384

High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel

Author keywords

DTMOS; Indium; Super steep retrograde (SSR) channel

Indexed keywords


EID: 0000209348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887025     Document Type: Article
Times cited : (18)

References (14)
  • 2
    • 0027641506 scopus 로고    scopus 로고
    • "Indium channel implant for improved short-channel behavior of submicrometer NMOSFET's," IEEE Electron Device Lett., vol. 9, p. 409, 1993.
    • G. G. Shahidi et al., "Indium channel implant for improved short-channel behavior of submicrometer NMOSFET's," IEEE Electron Device Lett., vol. 9, p. 409, 1993.
    • Shahidi, G.G.1
  • 10
    • 0031636057 scopus 로고    scopus 로고
    • (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well," in Symp. VLSI Tech. Dig. Tech., 1998, p. 76.
    • A. Shibata et al, "Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well," in Symp. VLSI Tech. Dig. Tech., 1998, p. 76.
    • "Ultra Low Power Supply Voltage
    • Shibata, A.1
  • 11
    • 0033889048 scopus 로고    scopus 로고
    • /j,m Dynamic threshold MOSFET using indium channel implantation," IEEE Electron Device Lett., vol. 21, p. 127, Mar. 2000.
    • S. J. Chang, C. Y Chang, T. S. Chao, and T. Y Huang, "High performance 0.1 /j,m Dynamic threshold MOSFET using indium channel implantation," IEEE Electron Device Lett., vol. 21, p. 127, Mar. 2000.
    • "High Performance 0.1
    • Chang, S.J.1    Chang, C.Y.2    Chao, T.S.3    Huang, T.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.