Initial growth of chemical-vapor-deposited SiO2

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2655-2661

  Ishikawa, M ^a   Egashira, Y ^a   Komiyama, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000180704     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366081     Document Type: Article

References (20)

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