Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 69, Issue 15, 1996, Pages 2237-2239

  Bertru, N ^a   Klann, R ^a   Mazuelas, A ^a   Brandt, O ^a   Ploog, K H ^a   Gaillard, S ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000177044     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117139     Document Type: Article

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