Conduction processes in boron- and nitrogen-doped diamond-like carbon films prepared by mass-separated ion beam deposition

Diamond and Related Materials

Volumn 4, Issue 5-6, 1995, Pages 666-672

  Ronning, C ^a   Griesmeier, U ^a   Gross, M ^a   Hofsass H C ^a   Downing, R G ^b   Lamaze, G P ^b  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Diamond like carbon; Doping; Electrical properties; Ion beam growth

Indexed keywords

EID: 0000175334     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(94)05219-0     Document Type: Article

References (37)

1. p-n junction diode made of semiconducting diamond films
2. Doping of highly tetrahedral amorphous carbon
3. Doping and growth of diamond-like carbon films by ion beam deposition
4. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, pp. 402ff.
5. Tetrahedral amorphous carbon properties and applications
6. Properties of tetrahedral amorphous carbon films deposited in a filtered cathodic arc in the presence of hydrogen
7. The theory of impurity conduction
8. Substitutional nitrogen doping of tetrahedral amorphous carbon