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Physical Review B

Volumn 41, Issue 17, 1990, Pages 12140-12149

Carrier dynamics of electrons and holes in moderately doped silicon

(2) Van Exter, Martin a Grischkowsky, D a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000167713 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.41.12140 Document Type: Article

Times cited : (249)

References (33)

1
- 36149025905
- (1957) Phys. Rev. , vol.106 , pp. 882
- Spitzer, W.G.¹ Fan, H.Y.²

2
- 0010738768
- (1968) J. Appl. Phys. , vol.39 , pp. 275
- Holm, J.D.¹ Champlin, K.S.²

3
- 4244046052
- (1975) Phys. Rev. Lett. , vol.35 , pp. 1359
- Allen, S.J.¹ Tsui, D.C.² DeRosa, F.³

4
- 6244257258
- (1975) Infrared Phys. , vol.15 , pp. 161
- Vindevoghel, M.¹ Vindevoghel, J.² Leroy, Y.³

5
- 0003470014
- Holt, Rinehart, and Winston, New York
- (1976) Solid State Physics
- Ashcroft, N.W.¹ Mermin, N.D.²

6
- 0020765367
- (1983) J. Appl. Phys. , vol.54 , pp. 3394
- Kinasewitz, R.T.¹ Senitzky, B.²

7
- 0001453275
- (1988) J. Appl. Phys. , vol.64 , pp. 4141
- Ohba, T.¹ Ikawa, S.²

8
- 0001368218
- (1988) Appl. Phys. Lett. , vol.53 , pp. 1480
- Fattinger, Ch.¹ Grischkowsky, D.²

9
- 84926555179
- 54, 490 (1989).

10
- 21544432863
- (1989) Appl. Phys. Lett. , vol.55 , pp. 337
- van Exter, M.¹ Fattinger, Ch.² Grischkowsky, D.³

11
- 84975571748
- (1989) Opt. Lett. , vol.14 , pp. 1128
- van Exter, M.¹ Fattinger, Ch.² Grischkowsky, D.³

12
- 84926560440
- IEEE Trans. Microwave Theory Tech. (to be published).
- van Exter, M.¹ Grischkowsky, D.²

13
- 36149005537
- (1961) Phys. Rev. , vol.124 , pp. 1813
- Dumke, W.P.¹

14
- 0004005306
- Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

15
- 36149009836
- (1956) Phys. Rev. , vol.104 , pp. 637
- Dexter, R.N.¹ Zeiger, H.J.² Lax, B.³

16
- 0000693504
- (1975) Phys. Rev. B , vol.12 , pp. 3318
- Ottaviani, G.¹ Reggiani, L.² Canali, C.³ Nava, F.⁴ Albergi-Quaranta, A.⁵

17
- 33751227761
- (1963) Phys. Rev. , vol.131 , pp. 2442
- Miyazawa, H.¹ Suzuki, K.² Maeda, H.³

18
- 21544439453
- (1987) Appl. Phys. Lett. , vol.50 , pp. 460
- Doany, F.E.¹ Grischkowsky, D.² Chi, C.C.³

19
- 0015587037
- (1973) Appl. Opt. , vol.12 , pp. 398
- Loewenstein, E.V.¹ Smith, D.R.² Morgan, R.L.³

20
- 0002681824
- edited by, M. Desirant, J. L. Michiels, Academic, London
- (1960) Solid State Physics in Electronics and Telecommunications, Proceedings of the International Conference on Solid State Physics in Electronics and Communications, Brussels, 1958 , vol.1 , pp. 206
- Cardona, M.¹ Paul, W.² Brooks, H.³

21
- 0018136239
- (1978) Infrared Phys. , vol.18 , pp. 613
- Birch, J.R.¹

22
- 84882885629
- Resistivity Measurements on Germanium for Transistors
- (1954) Proceedings of the IRE , vol.42 , pp. 420
- Valdes, L.B.¹

23
- 0017453673
- (1977) Solid State Electron. , vol.20 , pp. 77
- Jacoboni, C.¹ Canali, C.² Ottaviani, G.³ Alberigi-Quaranta, A.⁴

24
- 36149007748
- 93, 1204 (1954).
- (1953) Phys. Rev. , vol.92 , pp. 681
- Prince, M.B.¹

25
- 0016116273
- (1974) J. Appl. Phys. , vol.45 , pp. 4576
- Mousty, F.¹ Ostoja, P.² Passari, L.³

26
- 36149023347
- (1956) Phys. Rev. , vol.101 , pp. 944
- Herring, C.¹ Vogt, E.²

27
- 6244308152
- (1960) Phys. Rev. , vol.120 , pp. 39
- Long, D.¹ Myers, J.²

28
- 0001023655
- (1960) Phys. Rev. , vol.120 , pp. 2024
- Long, D.¹

29
- 0004190516
- Oxford University Press, London
- (1960) Electrons and Phonons
- Ziman, J.M.¹

30
- 2142714769
- and R. P. Phillips
- (1967) Solid State Electron. , vol.10 , pp. 943
- Schumann, P.A.¹

31
- 56849104728
- Infrared Free-Carrier Absorption in n-Type Silicon
- (1972) Physica Status Solidi (b) , vol.53 , pp. K61
- Basu, P.K.¹ Nag, B.R.²

32
- 0017471932
- (1977) Infrared Phys. , vol.17 , pp. 111
- Barta, E.¹

33
- 0004278609
- Cambridge University Press, London
- (1959) Semiconductors
- Smith, R.A.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.