Negative ion formation in SiO2 etching using a pulsed inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6894-6898

  Choi, Chang Ju ^a   Kwon, O Sung ^a   Seol, Yeo Song ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

CF4 Ar plasma; Fluorocarbon; Inductively coupled plasma; Microtrench; Negative ion; Pulsed plasma; Radical; SiO2 etching; Time modulation

Indexed keywords

EID: 0000149718     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6894     Document Type: Article

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