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The C values found for most of the compounds are systematically lower than the calculated ones. This is caused by silicon carbide formation during the oxidation process
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The C values found for most of the compounds are systematically lower than the calculated ones. This is caused by silicon carbide formation during the oxidation process.
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note
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Crystallographic data (excluding structure factors) for the structure reported in this paper have been deposited with the Cambridge Crystallographic Data Centre. Copies of the data can be obtained free of charge on application to The Director, CCDC, 12 Union Road, Cambridge CB2 1EZ, UK teched@chemcrys.cam.ac.uk by quoting the deposition number CCDC-100117.
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