Recent progress on HgCdTe at the national laboratory for infrared physics in China

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1176-1182

  Chu, Junhao ^a   Tang, Dingyuan ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

As impurity; Electrical properties; HgCdTe; Lifetimes; Photoluminescence

Indexed keywords

EID: 0000137951     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655005     Document Type: Article

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