Hot carriers in Si and Ge radiation detectors

Journal of Applied Physics

Volumn 42, Issue 13, 1971, Pages 5556-5562

  Drummond, W E ^a   Moll, J L ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000121897     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1659981     Document Type: Article

References (17)

1. The work of Duh (Ref. 17) indicates that the dominant phonon scattering mechanism for hot electrons in silicon is intervalley scattering by optical phonons near the Brillouin-zone edge. The variation in phonon energy for the TO mode is only a few percent over the zone. For the LO mode, the energy for the maximum wave vector is about 30% less than for zero wave vector.