Mechanism for Single-Event Burnout of Power MOSFETs and Its Characterization Technique

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1698-1703

  Kuboyama, S ^a   Matsuda, S ^a   Kanno, T ^a   Ishii, T ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b RYOEI Technica Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000076826     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211356     Document Type: Article

References (8)

1. T. A. Fischer, “Heavy-Ion-Induced, Gate-Rupture in Power MOSFETs,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, pp. 1786–1791, (1987)
2. A. E. Waskiewicz, J. W. Groninger, V. H. Strahan and D. M. Long, “Burnout of Power MOS Transistors with Heavy Ions of Californium-252,” IEEE Trans. Nucl. Sci., Vol. NS-33, No. 6, pp. 1710–1713, (1986)
3. J.H. Hohl and K. F. Galloway, “Analytical Model for Single Event Burnout of Power MOSFETs,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, pp. 1275–1280, (1987)
4. J. H. Hohl and G. H. Johnson, “Features of the Triggering Mechanism for Single Event Burnout of Power MOSFETs,” IEEE Trans. Nucl. Sci., Vol. NS-36. No. 6, pp. 2260-2266, (1989)
5. D. L. Oberg and J. L. Wert, “First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections,” IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, pp. 1736–1741, (1987)
6. F. B. McLean and T. R. Oldham, “Charge Funneling in n- and p-type type Si Substrates,” IEEE Trans. Nucl. Sci., Vol. NS-29, No. 6, pp. 2018–2023, (1982)
7. P. J. McNulty, W. J. Beauvais and D. R. Roth, “Determination of SEU Parameters of NMOS and CMOS SRAMs,” IEEE Trans. Nucl. Sci., Vol. NS-38, No. 6, pp. 1463–1470, (1991)
8. S. Nagata, S. Sugiyama and Y. Ishii, “Three dimensional device simulator VENUS-3D,” Proc. 10th Symposium on Calculations in Electrical and Electronics Engineering, pp. 357–362, (1989)