Suitability of Ge-As-Te system for optical data storage

Journal of Optics - Nouvelle Revue d'Optique

Volumn 27, Issue 3, 1996, Pages 139-143

  Mehra, R M ^a   Pundir, Amit ^a   Kapoor, Avinashi ^a   Mathur, P C ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

Crystallization Kinetics; Data Storage; Phase Change

Indexed keywords

EID: 0000047785     PISSN: 0150536X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0150-536X/27/3/008     Document Type: Article

References (9)

1. Chen M, Rubin KA, Barton RW. Appl Phys Lett 1986 ; 49 : 502.
2. van der Poel CJ, Gravesteijn DJ, Rippens W, Stockx H and van Uijen M. J Appl Phys 1986 ; 59 : 1819.
3. Koshino N, Maeda, Goto Y, Itoh K, Ogawa S. SPIE 529 1985 ; 40.
4. Barton R, Davis CR, Rubin K, Lim G. Appl Phys Lett 1986 ; 48 : 1255.
5. Takenaga M, Yamada N, Nishiuchi K, Akahira N, Ohta T, Nakamura S, Yamashita T. J Appl Phys 1983 ; 54 : 5376.
6. Ovshinsky SR. Phys Rev Lett 1968 ; 21 : 1450.
7. Srinivasan A, Gopal ESR, J Mat Sc 1992 ; 27 : 4208.
8. Fusong Jiang and Masahiro Okuda, Jap J Apl Phys 1991 ; 30, No. 1, 97.
9. Neufville JP and Rockstadt HK. Amorphous Liquid Semiconductors, eds. J. Stuke and W. Brenig (Taylor and Francis, London) p. 419 (1974).