Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1546-1548

  Kudo, Hiromitsu ^a   Ishibashi, Hiroki ^a   Zheng, Ruisheng ^a   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000034348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126091     Document Type: Article

References (18)

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