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Physical Review Letters
Volumn 74, Issue 16, 1995, Pages 3289-3292
Reentrant layer-by-layer etching of GaAs(001)
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0000026253     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.74.3289     Document Type: Article
Times cited : (33)
References (27)
  • 19
    • 84927469128 scopus 로고    scopus 로고
    • The oscillation period below 420 °C decreases as exp(-EA/kBT), EA≈1.8 eV, which can be modeled with an effective activation energy for the removal process. Because our main focus is on reentrant layer-by-layer etching, we have not included this step in our model.
  • 20
    • 84927508774 scopus 로고    scopus 로고
    • We assume that the removal of Ga atoms is the rate-limiting step and that the As kinetics and the effects of surface reconstructions can be incorporated into the effective model parameters [c12 c16].
  • 22
    • 84927478597 scopus 로고    scopus 로고
    • Possible mechanisms for the annihilation of vacancies formed in lower layers and the role of adatom and vacancy migration are discussed in Refs. [c3] and [c6].
  • 27
    • 0000121495 scopus 로고
    • Several factors can influence the etching action of the arsenic trihalides, including the lifetime of the molecule on the surface, its size, and the electronegativity of the halide. For example, molecules with longer surface lifetimes would favor a larger search radius L, while a more electronegative halide would presumably be less discriminating in the environment of the atom with which a bond is formed than a halide which is less electronegative, thus counteracting the effect of the search process. For a discussion of possible atomistic processes during chemical etching, see
    • (1991) Phys. Rev. B , vol.44 , pp. 8387
    • Ohno, T.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.