Chemical Composition of AlN Thin Films Deposited at 523-723 K Using Dimethylethylamine Alane and Ammonia

Chemistry of Materials

Volumn 10, Issue 3, 1998, Pages 777-783

  Kidder Jr , J N ^a,c   Yun, H K ^a   Rogers Jr , J W ^b   Pearsall, T P ^a  

^a UNIVERSITY OF WASHINGTON   (United States)

^b University of Washington   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000015695     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm970556u     Document Type: Article

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