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Volumn 3333, Issue , 1998, Pages 1413-1419

Sensitivity and image quality of resists with electron-beam, ion-beam, and optical exposure

Author keywords

Chemically amplified; Diffusion; Electron beam; Ion beam; Optical; Resist; Resolution; Sensitivity

Indexed keywords

DIFFUSION; ELECTRONS; IMAGE QUALITY; ION BEAMS; IONS; PHOTORESISTS;

EID: 0000011828     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312465     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 1
    • 0010231928 scopus 로고
    • Resist mechanisms and models in electron-beam lithography,
    • Ph.D. Thesis, University of California at Berkeley
    • N. Tam, "Resist mechanisms and models in electron-beam lithography," Ph.D. Thesis, University of California at Berkeley (1991).
    • (1991)
    • Tam, N.1
  • 2
    • 60949099535 scopus 로고    scopus 로고
    • A. Tritchkov, R. Jonckheere, L Van den hove, Use of positive and negative chemically amplified resists in electron-beam direct-write lithography, J. Vac. Sci. Technol. B, 13(6), pp. 2986-2993, Nov/Dec 1995.
    • A. Tritchkov, R. Jonckheere, L Van den hove, "Use of positive and negative chemically amplified resists in electron-beam direct-write lithography," J. Vac. Sci. Technol. B, Vol 13(6), pp. 2986-2993, Nov/Dec 1995.
  • 3
    • 0027167305 scopus 로고
    • Resolution limits of focused-ion-beam resist patterning
    • R. Kubena, "Resolution limits of focused-ion-beam resist patterning," Mat. Res. Soc. Symp. Proc. ,Vol. 279, pp. 567-576, 1993.
    • (1993) Mat. Res. Soc. Symp. Proc , vol.279 , pp. 567-576
    • Kubena, R.1
  • 4
    • 0029769441 scopus 로고    scopus 로고
    • Determination of acid diffusion and energy deposition parameters by point e-beam exposure in chemically amplified resists
    • I. Raptis, et.al., "Determination of acid diffusion and energy deposition parameters by point e-beam exposure in chemically amplified resists," Microelectronic Engineering, Vol. 30, pp. 295-299, 1996.
    • (1996) Microelectronic Engineering , vol.30 , pp. 295-299
    • Raptis, I.1
  • 5
    • 60949094275 scopus 로고    scopus 로고
    • Modeling of the patterning process with chemically-amplified resists
    • Nagoya, Japan
    • M. Zuniga, N. Rau, A. Neureuther, "Modeling of the patterning process with chemically-amplified resists," 10th Microprocess Conference, Nagoya, Japan, 1997.
    • (1997) 10th Microprocess Conference
    • Zuniga, M.1    Rau, N.2    Neureuther, A.3
  • 7
    • 0029727248 scopus 로고    scopus 로고
    • Calibration of chemically amplified resist models
    • J. Byers, J. Petersen, J. Stutevant, "Calibration of chemically amplified resist models," Proceedings of SPIE, Vol. 2724, p. 156, 1996.
    • (1996) Proceedings of SPIE , vol.2724 , pp. 156
    • Byers, J.1    Petersen, J.2    Stutevant, J.3
  • 8
    • 33749909377 scopus 로고    scopus 로고
    • Application of a general reaction/diffusion model to emerging materials with extension to non-actinic exposure
    • M Zuniga, N. Rau, A. Neureuther, "Application of a general reaction/diffusion model to emerging materials with extension to non-actinic exposure," Proceedings of SPIE, Vol. 3049, pp. 256-268, 1997.
    • (1997) Proceedings of SPIE , vol.3049 , pp. 256-268
    • Zuniga, M.1    Rau, N.2    Neureuther, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.