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Volumn 1, Issue 2, 1981, Pages 201-215

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Author keywords

mass spectroscopy; SF6 discharge; silicon

Indexed keywords


EID: 0000002852     PISSN: 02724324     EISSN: 15728986     Source Type: Journal    
DOI: 10.1007/BF00564581     Document Type: Article
Times cited : (36)

References (19)
  • 1
    • 84934003318 scopus 로고    scopus 로고
    • J. J. Wagner and W. W. Brandt, Proc. Fourth International Symposium on Plasma Chemistry, Zürich, 1979, p. 120.
  • 3
    • 84934003319 scopus 로고    scopus 로고
    • G. Bruno, P. Capezzuto, F. Cramorossa, R. d'Agostino, and G. Latrofa, Proc. Fourth International Symposium on Plasma Chemistry, Zürich, 1979, p. 460.
  • 6
    • 84934003320 scopus 로고    scopus 로고
    • H. G. Lergon and K. G. Müller, Proc. Fourth International Symposium on Plasma Chemistry, Zürich, 1979, p. 34.
  • 11
    • 84934003321 scopus 로고    scopus 로고
    • L. G. Christophorou, D. R. James, R. Y. Pai, R. A. Mathis, M. O. Pace, D. W. Bouldin, A. A. Christodoulides, and C. C. Chan, High-Voltage Research (Breakdown strengths of Gaseous and Liquid Insulators), Semiannual Report, ORNL/TM-6113, Oak Ridge National Laboratory, November, 1997.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.